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BLF6G10L-260PRN Datasheet - NXP Semiconductors.

BLF6G10L-260PRN image

Part Name
BLF6G10L-260PRN

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15 Pages

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275.5 kB

MFG CO.
NXP
NXP Semiconductors. 

General description
260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.


FEATUREs and benefits
■ Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 1800 mA:
    ◆ Average output power = 40 W
    ◆ Power gain = 22.0 dB
    ◆ Efficiency = 26.5 %
    ◆ ACPR = -39 dBc
■ Easy power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (700 MHz to 1000 MHz)
■ Internally matched for ease of use
■ Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC


APPLICATIONs
■ RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range


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