BGD712C Datasheet - NXP Semiconductors.
MFG CO.

NXP Semiconductors.
General description
Hybrid high dynamic range amplifier module in SOT115J package operating at a supply voltage of 24 V (DC).
FEATUREs and benefits
■ Excellent linearity
■ Extremely low noise
■ Excellent return loss properties
■ Silicon nitride passivation
■ Rugged construction
■ Gold metallization ensures excellent reliability
APPLICATIONs
■ CATV systems operating in the 40 MHz to 750 MHz frequency range.
Page Link's:
1
2
3
4
5
6
7
8
Part Name
Description
View
MFG CO.
750 MHz, 18.5 dB gain power doubler amplifier
Philips Electronics
750 MHz, 18.5 dB gain power doubler amplifier
Philips Electronics
860 MHz, 18.5 dB gain power doubler amplifier
Philips Electronics
860 MHz, 18.5 dB gain power doubler amplifier
NXP Semiconductors.
860 MHz, 18.5 dB gain power doubler amplifier
NXP Semiconductors.
860 MHz, 18.5 dB gain power doubler amplifier
Philips Electronics
550 MHz, 18.5 dB gain power doubler amplifier ( Rev : 2001 )
Philips Electronics
750 MHz, 18.5 dB gain push-pull amplifier
Philips Electronics
1000 MHz, 18.5 dB gain push-pull amplifier
NXP Semiconductors.
860 MHz, 20 dB gain power doubler amplifier
NXP Semiconductors.