BGA427(2007) Datasheet - Infineon Technologies
MFG CO.

Infineon Technologies
Si-MMIC-Amplifier in SIEGET® 25-Technologie
• Cascadable 50 Ω-gain block
• Unconditionally stable
• Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1) gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) IP3out = +7 dBm at 1.8 GHz (VD=3V, ID=9.4mA)
• Noise figure NF = 2.2 dB at 1.8 GHz
• Typical device voltage VD = 2 V to 5 V
• Reverse isolation > 35 dB (Appl.2)
• Pb-free (RoHS compliant) package1)
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Part Name
Description
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MFG CO.
Si-MMIC-Amplifier in SIEGET® 25-Technologie
Infineon Technologies
Si-MMIC-Amplifier in SIEGET® 25-Technologie
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Si-MMIC-Amplifier in SIEGET® 25-Technologie ( Rev : 2007 )
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Si-MMIC-Amplifier in SIEGET® 25-Technologie
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Si-MMIC-Amplifier in SIEGET® 25-Technologie
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Si-MMIC-Amplifier in SIEGET 25-Technologie ( Rev : 2002 )
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