General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.
The BFU550X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

FEATUREs and benefits
• Low noise, high breakdown RF transistor
• AEC-Q101 qualified
• Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
• Maximum stable gain 21.5 dB at 900 MHz
• 11 GHz fT silicon technology

APPLICATIONs
• Applications requiring high supply voltages and high breakdown voltages
• Broadband amplifiers up to 2 GHz
• Low noise amplifiers for ISM applications
• ISM band oscillators