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BDY46 Datasheet - New Jersey Semiconductor
MFG CO.

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min.)
• DC Current Gain-
: hFE=20(Min.)@IC = 2A
• Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC = 15A
• High Switching Speed
APPLICATIONS
• Voltage regulator
• Inverter
• Switching mode power supply
Part Name
Description
View
MFG CO.
Silicon NPN PowerTransistor
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Silicon NPN PowerTransistor
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Silicon NPN PowerTransistor
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Silicon NPN PowerTransistor
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Silicon NPN PowerTransistor
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Silicon NPN PowerTransistor
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Silicon NPN PowerTransistor
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Silicon NPN PowerTransistor
New Jersey Semiconductor
Silicon NPN PowerTransistor
New Jersey Semiconductor
Silicon NPN PowerTransistor
New Jersey Semiconductor