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BD830 Datasheet - Inchange Semiconductor

BD830 image

Part Name
BD830

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page
2 Pages

File Size
244.3 kB

MFG CO.
Iscsemi
Inchange Semiconductor 

DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min)
• High DC Current Gain
• Low Saturation Voltage
• Complement to Type BD829
• Minimum Lot-to-Lot variations for robust device performance and reliable operation


APPLICATIONS
• Designed for driver-stages in hi-fi amplifiers and television circuits.

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