BD676A Datasheet - New Jersey Semiconductor
MFG CO.
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage— : V(BR)CEo = -45 V
• DC Current Gain— : hFE = 750(Min)@lc=-2A
• Complement to Type BD675A
APPLICATIONS
• Designed for use as output devices in complementary general-purpose amplifier applications.
Part Name
Description
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Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
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Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
