HOME >>> Inchange Semiconductor >>>
BD315 PDF
BD315 Datasheet - Inchange Semiconductor
MFG CO.

Inchange Semiconductor
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-hFE= 25(Min.)@IC = 8A
• Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 8A
• Complement to Type BD316
APPLICATIONS
• Designed for high quality amplifiers operating up to 100 watts into 4 ohm load.
Part Name
Description
View
MFG CO.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor