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BD249 PDF
BD249 Datasheet - New Jersey Semiconductor
MFG CO.

New Jersey Semiconductor
DESCRIPTION
• Collector Current -lc= 25A
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 45V(Min)- BD249; 60V(Min)- BD249A
80V(Min)- BD249B; 100V(Min)- BD249C
• Complement to Type BD250/A/B/C
APPLICATIONS
• Designed for use in general purpose power amplifier and
switching applications
Part Name
Description
View
MFG CO.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor