Description
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

FEATUREs
• BVCEO > 80V
• IC = 1A High Continuous Collector Current
• ICM = 2A Peak Pulse Current
• 2W Power Dissipation
• Low Saturation Voltage VCE(SAT) < 500mV @ 0.5A
• Complementary PNP Type: BCP5316Q
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen- and Antimony-Free. “Green” Device (Note 3)
• The BCP5616Q is suitable for automotive applications
   requiring specific change control; this part is AEC-Q101
   qualified, PPAP capable, and manufactured in IATF16949
   certified facilities.
   https://www.diodes.com/quality/product-definitions/

APPLICATIONs
• Medium Power Switching or Amplification Applications
• AF Driver and Output Stages