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BB501M PDF
BB501M Datasheet - Hitachi -> Renesas Electronics
MFG CO.
Hitachi -> Renesas Electronics
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain; PG = 21.5 dB typ. at f = 900 MHz
• Low noise; NF = 1.85 dB typ. at f = 900 MHz
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod)
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Description
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MFG CO.
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
