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B955 Datasheet - New Jersey Semiconductor
MFG CO.

New Jersey Semiconductor
DESCRIPTION
• High DC Current Gain-
: hFE=1000(Min)@lc=-5A
• Collector-Emitter Breakdown Voltage-
:V(BR)CEO=-120V(Min)
• Low Collector-Emitter Saturation Voltage-
:VCE(sat)=-1.5V(Max)@lc=-5A
• Complement to Type 2SD1126
APPLICATIONS
• Designed for power switching applications.
Part Name
Description
View
MFG CO.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor