Part Name
B60N10
Other PDF
no available.
PDF
page
10 Pages
File Size
678.4 kB
MFG CO.
Jiangsu Donghai Semiconductor Technology Co.,Ltd
B60N10(V4) Datasheet - Jiangsu Donghai Semiconductor Technology Co.,Ltd
Jiangsu Donghai Semiconductor Technology Co.,Ltd
Description
These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
FEATUREs
● Lead free and Green Device Available
● Low Rds-on to Minimize Conductive Loss
● High avalanche Current
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
APPLICATIONs
● Power Supply
● DC-DC Converters
● Full Bridge Control
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