B1558 Datasheet - Toshiba
MFG CO.

Toshiba
Power Amplifier Applications
• High breakdown voltage: VCEO = −140 V (min)
• Complementary to 2SD2387
Part Name
Description
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MFG CO.
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor) ( Rev : 2006 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1999 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
Toshiba