HOME >>> New Jersey Semiconductor >>>
B1404 PDF
B1404 Datasheet - New Jersey Semiconductor
MFG CO.
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-.. :V(BR)cEo=-120V(Min)
• High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, lc= -1.5A
APPLICATIONS
• Designed for low frequency power amplifier applications.
Part Name
Description
View
MFG CO.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
