Description
These N-channel Power MOSFETs are developed using STMicroelectronics revolutionary MDmesh technology, which associates the multiple drain process with the companys PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing STs proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages ( Rev : 2014 )
STMicroelectronics
N-channel 500 V, 0.2 Ω typ., 14 A MDmesh™ II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 500 V, 0.24 Ω typ., 13 A MDmesh™ M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 500 V, 0.24 Ω typ., 13 A MDmesh™ M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages ( Rev : 2020 )
STMicroelectronics
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK and TO-220 packages
STMicroelectronics
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ M5 Power MOSFETs in a DPAK, D²PAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFETs in D²PAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 650 V, 70 mΩ typ., 33 A, MDmesh M5 Power MOSFETs in D²PAK, TO-220FP, I²PAK, TO-220 and TO-247 packages ( Rev : 2019 )
STMicroelectronics
N-channel 650 V, 0.15 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics