B12NM50 Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
General features
■ High dv/dt and avalanche capabilities
■ Low input capacitance and gate charge
■ 100% avalanche tested
■ Low gate input resistance
■ Tight process control and high manufacturing yields
APPLICATIONs
■ Switching application
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Part Name
Description
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MFG CO.
N-channel 500V - 0.32Ω - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmesh™ Power MOSFET (with fast diode)
STMicroelectronics
N-channel 550V @ Tjmax - 0.7Ω - 8A - TO-220 - TO-220FP MDmesh™ Power MOSFET
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N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET
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N-channel 650V - 0.16Ω - 19A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET
STMicroelectronics
N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESH™ Power MOSFET
STMicroelectronics
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET
STMicroelectronics
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET
STMicroelectronics
N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-CHANNEL 550V @ Tjmax - 0.065Ω - 45A TO-247 MDmesh™ MOSFET ( Rev : 2004 )
STMicroelectronics
N-CHANNEL 550V @ Tjmax - 0.32Ω - 14A TO-247 MDmesh™ MOSFET
STMicroelectronics