Description
The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Program mable Read Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20 µA.

FEATUREs
• Single 3.3V ± 10% Supply
• Fast Read Access Time - 200 ns
• Automatic Page Write Operation
   Internal Address and Data Latches for 128-Bytes
   Internal Control Timer
• Fast Write Cycle Time
   Page Write Cycle Time - 10 ms Maximum
   1 to 128-Byte Page Write Operation
• Low Power Dissipation
   15 mA Active Current
   20 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
   Endurance: 100,000K Cycles
   Data Retention: 10 Years
• JEDEC Approved Byte-Wide Pinout
• Commercial and Industrial Temperature Ranges