Description/Applications
The AT-41535 of Avago Techologies is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41535 is house in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 15 emitter fngers interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifer, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 ??at 1GHz, makes this device easy to use as a low noise amplifer.
The AT-41535 bipolar transistor is fabricated using Avago Technologies’ 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion implantation, self-alignment techniques, and gold metallization in the fabrication of this device.

FEATUREs
• Low Noise Figure :
   - 1.7 dB typical at 2.0 GHz
   - 3.0 dB typical at 4.0 GHz
• High Associated Gain
   - 14.0 dB typical at 2.0GHz
   - 10.0 dB typical at 4.0 GHz
• High Gain-Bandwidth Product
   - 8.0 GHz typical fT
• Cost Effective Ceramic Micro-strip Package