Functional description
The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.

FEATUREs
• AS7C1026 (5V version)
• AS7C31026 (3.3V version)
• Industrial and commercial versions
• Organization: 65,536 words x 16 bits
• Center power and ground pins for low noise
• High speed
    - 12/15/20 ns address access time
    - 6,7,8 ns output enable access time
• Low power consumption: ACTIVE
    - 880 mW (AS7C1026) / max @ 12 ns
    - 396 mW (AS7C31026) / max @ 12 ns
• Low power consumption: STANDBY
    - 28 mW (AS7C1026) / max CMOS I/O
    - 18 mW (AS7C31026) / max CMOS I/O
• 2.0V data retention
• Easy memory expansion with CE, OE inputs
• TTL-compatible, three-state I/O
• JEDEC standard packaging
    - 44-pin 400 mil SOJ
    - 44-pin 400 mil TSOP II
    - 48-ball 6 mm × 8 mm CSP mBGA
• ESD protection ≥ 2000 volts
• Latch-up current ≥ 200 mA