Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• New T-MAX™ Package
   (Clip-mounted TO-247 Package)
• Faster Switching