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AO6602 PDF
AO6602 Datasheet - Alpha and Omega Semiconductor
MFG CO.

Alpha and Omega Semiconductor
General Description
The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6602 is Pb-free (meets ROHS & Sony 259 specifications). AO6602L is a Green Product ordering option. AO6602 and AO6602L are electrically identical.
FEATUREs
n-channel p-channel
VDS (V) = 30V -30V
ID = 3.1A (VGS = 10V) -2.7A (VGS = -10V)
RDS(ON)
< 75mΩ (VGS = 10V) < 100mΩ(VGS = -10V)
< 115mΩ (VGS = 4.5V) < 180mΩ(VGS = -4.5V)
Part Name
Description
View
MFG CO.
Complementary Enhancement Mode Field Effect Transistor ( Rev : V2 )
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor ( Rev : 2003 )
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor