DESCRIPTION
   The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low inline power loss and resistance to transient are needed.
   The AM8958 is available in SOP8 Package

FEATURES
N-Channel
● 30V /6.8A, RDS(ON) = 23mΩ(typ.)@VGS = 10V
● 30V /6.5A, RDS(ON) = 34mΩ(typ.)@VGS = 4.5V

P-Channel
● -30V / -6.5A, RDS(ON) = 35mΩ(typ.)@VGS = -10V
● -30V / -4.4A, RDS(ON) = 60mΩ(typ.)@VGS = -4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and Maximum DC current capability
● Available in SOP8 Package

APPLICATION
● Power Management in Note book
● Portable Equipment
● Battery Powered System