GENERAL DESCRIPTION
   The Am29BL802C is an 8 Mbit, 3.0 Volt-only burst mode Flash memory devices organized as 524, 288 words. The device is offered in a 56-pin SSOP package. These devices are designed to be programmed in-system with the standard system 3.0-volt VCC supply. A 12.0-volt VPP or 5.0 VCC is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
◾ 32 words sequential with wrap around (linear
   32), bottom boot
◾ One 8 Kword, two 4 Kword, one 48 Kword, three
   64 Kword, and two 128 Kword sectors
◾ Single power supply operation
   — Regulated voltage range: 3.0 to 3.6 volt read and
      write operations and for compatibility with high
      performance 3.3 volt microprocessors
◾ Read access times
   Burst access times as fast as 17 ns at industrial
   temperature range (18 ns at extended
   temperature range)
   Initial/random access times as fast as 65 ns
◾ Alterable burst length via BAA# pin
◾ Power dissipation (typical)
   — Burst Mode Read: 15 mA @ 25 MHz,
      20 mA @ 33 MHz, 25 mA @ 40 MHz
   — Program/Erase: 20 mA
   — Standby mode, CMOS: 3 µA
◾ 5 V-tolerant data, address, and control signals
◾ Sector Protection
   — Implemented using in-system or via
      programming equipment
   — Temporary Sector Unprotect feature allows code
      changes in previously locked sectors
◾ Unlock Bypass Program Command
   — Reduces overall programming time when
      issuing multiple program command sequences
◾ Embedded Algorithms
   — Embedded Erase algorithm automatically
      preprograms and erases the entire chip or any
      combination of designated sectors
   — Embedded Program algorithm automatically
      writes and verifies data at specified addresses
◾ Minimum 100,000 erase cycle guarantee
   per sector
◾ 20-year data retention