FEATURES
■ 2 – 512K x 8 SRAMs & 2 – 512K x 8 Flash Die in One MCM
■ Access Times of 25ns (SRAM) and 60ns (Flash) or 35ns (SRAM) and 70 or 90ns (Flash)
■ 512K x 16 SRAM
■ 512K x 16 5V Flash
■ Organized as 512K x 16 of SRAM and 512K x 16 of Flash Memory with Separate Data Buses
■ Both Blocks of Memory are User Configurable as 1M x 8
■ Low Power CMOS
■ Input and Output TTL Compatible Design
■ MIL-PRF-38534 Compliant MCMs Available
■ Decoupling Capacitors and Multiple Grounds for Low Noise
■ Industrial and Military Temperature Ranges
■ Industry Standard Pinouts
■ Packaging – Hermetic Ceramic
    ● 66 Pin, 1.08" x 1.08" x .160" PGA Type, No Shoulder, Aeroflex code# "P3"
    ● 66 Pin, 1.08" x 1.08" x .185" PGA Type, With Shoulder, Aeroflex code# "P7"
    ● 68 Lead, .94" x .94" x .140" Single-Cavity Small Outline Gull Wing, Aeroflex code# "F18" (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint)
■ DESC SMD Pending – 5962-96901

FLASH MEMORY FEATURES
■ Sector Architecture (Each Die)
    ● 8 Equal Sectors of 64K bytes each
    ● Any combination of sectors can be erased with one command sequence.
■ +5V Programing, 5V ±10% Supply
■ Embedded Erase and Program Algorithms
■ Hardware and Software Write Protection
■ Internal Program Control Time.
■ 10,000 Erase / Program Cycles