A1436 Datasheet - SANYO -> Panasonic
MFG CO.

SANYO -> Panasonic
High hFE, AF Amplifier Applications
FEATUREs
• Adoption of MBIT process.
• High DC current gain (hFE=500 to 1200).
• Large current capacity.
• Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
• High VEBO (VEBO≥15V).
APPLICATIONs
• AF amplifier, various drivers, muting circuit.
Part Name
Description
View
MFG CO.
Silicon PNP epitaxial planar transistor
Panasonic Corporation
Silicon PNP Epitaxial Planar Transistor
Sanken Electric co.,ltd.
Silicon PNP Epitaxial Planar Transistor
Sanken Electric co.,ltd.
Silicon PNP Epitaxial Planar Transistor
Sanken Electric co.,ltd.
Silicon PNP Epitaxial Planar Transistor
Cystech Electonics Corp.
Silicon PNP Epitaxial Planar Transistor
Cystech Electonics Corp.
Silicon PNP Epitaxial Planar Transistor
Cystech Electonics Corp.
Silicon PNP Epitaxial Planar Transistor
Sanken Electric co.,ltd.
Silicon PNP Epitaxial Planar Transistor
Sanken Electric co.,ltd.
Silicon PNP Epitaxial Planar Transistor
Unspecified