Part Name
80N4F6
Other PDF
PDF
page
16 Pages
File Size
1.1 MB
MFG CO.
STMicroelectronics
80N4F6(2014) Datasheet - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
FEATUREs
• Designed for automotive applications and
AEC-Q101 qualified
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package ( Rev : 2014 )
STMicroelectronics
Automotive-grade N-channel 55 V, 6.5 mΩ typ., 80 A STripFET F3 Power MOSFET in a DPAK package
STMicroelectronics
Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ F6 Power MOSFET in a DPAK package
STMicroelectronics
Automotive-grade N-channel 100 V, 5 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package
STMicroelectronics
Automotive-grade P-channel -40 V, 12 mΩ typ., -50 A STripFET™ F6 Power MOSFET in a DPAK package
STMicroelectronics
Automotive-grade P-channel -40 V, 12 mΩ typ., -50 A STripFET™ F6 Power MOSFET in a DPAK package
STMicroelectronics
Automotive-grade N-channel 200 V, 0.10 Ω typ., 18 A STripFET™ Power MOSFET in a DPAK package
STMicroelectronics
Automotive-grade N-channel 500 V, 0.336 Ω typ., 10 A MDmesh™ M2 Power MOSFET in a DPAK package
STMicroelectronics
N-channel 60 V, 3.1 mΩ typ., 80 A STripFET F7 Power MOSFET in a DPAK package
STMicroelectronics
Share Link: 