DESCRIPTION
The V2G00 is an advanced high-speed CMOS SINGLE 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
   
■ HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V
■ LOW POWER DISSIPATION:
    ICC = 1µA(MAX.) at TA = 25°C
■ HIGH NOISE IMMUNITY:
    VNIH = VNIL = 28% VCC (MIN.)
■ POWER DOWN PROTECTION ON INPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
    |IOH| = IOL = 8mA (MIN)
■ BALANCED PROPAGATION DELAYS:
    tPLH ≅ tPHL
■ OPERATING VOLTAGE RANGE:
    VCC(OPR) = 2V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY