DESCRIPTION
The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
   
■ HIGH SPEED: tPD = 4.3 ns (TYP.) at VCC = 5V
■ LOW POWER DISSIPATION:
    ICC =1 µA (MAX.) at TA = 25 °C
■ HIGH NOISE IMMUNITY:
    VNIH = VNIL = 28% VCC (MIN.)
■ POWERDOWN PROTECTIONON INPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
    |IOH| = IOL = 8 mA (MIN)
■ BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL
■ OPERATING VOLTAGERANGE:
    VCC (OPR)= 2V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY