Part Name
54NM65ND
Description
Other PDF
PDF
page
13 Pages
File Size
541.7 kB
MFG CO.
STMicroelectronics
54NM65ND Datasheet - STMicroelectronics
STMicroelectronics
Description
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
FEATUREs
■ The worldwide best RDS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
APPLICATION
Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package
STMicroelectronics
N-channel 600 V, 0.075 Ω typ., 35 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package
STMicroelectronics
N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
STMicroelectronics
N-channel 650 V, 0.087 Ω typ., 32 A MDmesh™ M2 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 650 V, 0.058 Ω typ., 48 A MDmesh™ DM2 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-247 package ( Rev : 2016 )
STMicroelectronics
N-channel 600 V, 0.04 Ω typ., 65 A, MDmesh™ II Power MOSFET in a TO-247 package
STMicroelectronics
Automotive-grade N-channel 650 V, 0.041 Ω typ., 46 A MDmesh™ V Power MOSFET in a TO-247 package ( Rev : 2013 )
STMicroelectronics
Share Link: 