VDSS = 600V
RDS (ON) = 1.9 Ω
ID = 4.0A

Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed.

FEATUREs
• Critical DC Electrical parameters specified at elevated Temp.
• Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser
• Super high density cell design for extremely low RDS(ON)