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3N60L-TN3-R Datasheet - Unisonic Technologies

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Part Name
3N60L-TN3-R

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9 Pages

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397.9 kB

MFG CO.
UTC
Unisonic Technologies 

DESCRIPTION
The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.


FEATURES
* VDS = 600V, ID = 3A
* RDS(ON) < 3.6Ω @VGS = 10 V
* Ultra low gate charge ( typical 18 nC )
* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


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