3N60-A-TA3-T Datasheet - VBsemi Electronics Co.,Ltd
MFG CO.

VBsemi Electronics Co.,Ltd
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS directive 2002/95/EC
Part Name
Description
View
MFG CO.
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd