Description
The devices are NPN transistors manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

FEATUREs
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast-switching speed

APPLICATIONs
■ Emergency lighting
■ Led
■ CCFL drivers (back lighting)
■ Voltage regulation
■ Relay driver