Part Name
2STC2510
Other PDF
PDF
page
9 Pages
File Size
133.4 kB
MFG CO.
STMicroelectronics
2STC2510(2008_11) Datasheet - STMicroelectronics
STMicroelectronics
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
FEATUREs
■ High breakdown voltage VCEO = 100 V
■ Complementary to 2STA2510
■ Typical ft = 20 MHz
■ Fully characterized at 125 °C
APPLICATION
■ Audio power amplifier
Part Name
Description
View
MFG CO.
High power NPN epitaxial planar bipolar transistor ( Rev : 2008_07 )
STMicroelectronics
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