Part Name
2SK3911
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MFG CO.
Toshiba
2SK3911 Datasheet - Toshiba
Toshiba
Switching Regulator Applications
• Small gate charge: Qg= 60 nC (typ.)
• Low drain-source ON resistance: RDS (ON)= 0.22 Ω(typ.)
• High forward transfer admittance: |Yfs| = 11 S (typ.)
• Low leakage current: IDSS= 500 μA (VDS= 600 V)
• Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
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MFG CO.
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π -MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2004 )
Toshiba
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