2SK3842(2006) Datasheet - Toshiba
MFG CO.

Toshiba
Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
• Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 93 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Part Name
Description
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MFG CO.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2004 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2004 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2001 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2001 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2002 )
Toshiba