DESCRIPTION
The 2SK3424 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

FEATURES
• 4.5 V drive available
• Low on-state resistance RDS(on)1 = 11.5 mΩ MAX. (VGS = 10 V, ID = 24 A)
• Low gate charge QG = 34 nC TYP. (ID = 48 A, VDD = 24 V, VGS = 10 V)
• Built-in gate protection diode
• Surface mount device available