2SK3366 Datasheet - Renesas Electronics
MFG CO.

Renesas Electronics
DESCRIPTION
The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers.
FEATURES
• Low on-resistance
RDS(on)1 = 21 mΩ (MAX.) (VGS = 10 V, ID = 10 A)
RDS(on)2 = 33 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A)
RDS(on)3 = 43 mΩ (MAX.) (VGS = 4.0 V, ID = 10 A)
• Low Ciss : Ciss = 730 pF (TYP.)
• Built-in gate protection diode
Part Name
Description
View
MFG CO.
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics