2SK3342 Datasheet - Toshiba
MFG CO.

Toshiba
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
● Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.)
● High forward transfer admittance : |Yfs| = 4.5 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 250 V)
● Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Part Name
Description
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MFG CO.
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2009 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2010 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Toshiba