2SK3320(1999) Datasheet - Toshiba
MFG CO.
Toshiba
FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS
• Two devices in a Ultra Super Mini (five pins) package
• High |Yfs|: |Yfs| = 15 mS (Typ.) (VDS = 10 V, VGS = 0)
• High Breakdown Voltage: VGDS = −50 V
• Super Low Noise: NF = 1.0dB (Typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ)
• High Input Impedance: IGSS = −1 nA (Max.) (VGS = −30 V)
Part Name
Description
View
MFG CO.
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
