2SK3129(1999) Datasheet - Toshiba
MFG CO.

Toshiba
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS
CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
• Low Drain-Source ON Resistance: RDS (ON) = 5.5 mΩ (Typ.)
• High Forward Transfer Admittance: |Yfs| = 70 S (Typ.)
• Low Leakage Current: IDSS = 100 μA (Max.) (VDS = 30 V)
• Enhancement-Mode: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Part Name
Description
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MFG CO.
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Toshiba