2SK3113 Datasheet - TY Semiconductor
MFG CO.

TY Semiconductor
Features
Low on-state resistance RDS(on)=4.4Ω MAX. (VGS=10V,ID=1.0A)
Low gate charge
QG= 9 nC TYP. (VDD=450V,VGS=10V,ID=2.0A)
Gate voltage rating ±30 V
Avalanche capability ratings
Part Name
Description
View
MFG CO.
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology