SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION
This product is n-Chanel MOS Field Effect Transistor designed high current switching application.

FEATURE
• Low On-Resistance
  RDS(on)1= 14 mΩTyp. (VGS = 10 V, ID=18 A)
  RDS(on)2= 22 mΩTyp. (VGS = 4 V, ID= 18 A)
• Low Ciss           Ciss= 1250 pF Typ.
• Built-in G-S Protection Diode