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2SK2922 PDF
2SK2922 Datasheet - Hitachi -> Renesas Electronics
MFG CO.
Hitachi -> Renesas Electronics
Features
• High power output, High gain, High efficiency
PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz)
• Compact package capable of surface mounting
Part Name
Description
View
MFG CO.
Silicon N-Channel MOS FET UHF Power Amplifier
Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier ( Rev : 2007 )
Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier
Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Hitachi -> Renesas Electronics
