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2SK2912 PDF
2SK2912 Datasheet - Hitachi -> Renesas Electronics
MFG CO.
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET
High Speed Power Switching
FEATUREs
• Low on-resistance
RDS= 15 mΩ typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
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Part Name
Description
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MFG CO.
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
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Silicon N-Channel MOS FET High Speed Power Switching
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Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
