2SK2415(JM) Datasheet - NEC => Renesas Technology
MFG CO.

NEC => Renesas Technology
The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.
Features
• Low on-state resistance
RDS(on)1 = 0.10 Ω MAX. (VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 0.15 Ω MAX. (VGS = 4 V, ID = 4.0 A)
• Low Ciss: Ciss = 570 pF TYP.
Page Link's:
1
2
3
4
5
6
7
Part Name
Description
View
MFG CO.
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET
Renesas Electronics