2SK2009TE85L(2007) Datasheet - Toshiba
MFG CO.
Toshiba
High Speed Switching Applications
Analog Switch Applications
• High input impedance.
• Low gate threshold voltage: Vth = 0.5~1.5 V
• Excellent switching times: ton = 0.06 μs (typ.) toff = 0.12 μs (typ.)
• Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.)
• Small package.
• Enhancement-mode
Part Name
Description
View
MFG CO.
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba
