2SK170-BL Datasheet - Toshiba
MFG CO.
Toshiba
Low Noise Audio Amplifier Applications
• Recommended for first stages of EQ and M.C. head amplifiers.
• High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
• High breakdown voltage: VGDS = −40 V
• Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz)
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Part Name
Description
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MFG CO.
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 1997 )
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 2007 )
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
