2SK1658-T1 Datasheet - NEC => Renesas Technology
MFG CO.

NEC => Renesas Technology
DESCRIPTION
The 2SK1658 is an N -channel vertical type MOS FET which can be driven by 2.5 V power supply.
As the MOS FET is low Gate Leakage Current, it is suitable for appliances including Filter Circuit.
FEATURES
• Directly driven by ICs having a 3 V power supply.
• Has low Gate Leakage Current
IGSS = ±5 nA MAX. (VGS = ±3.0 V)
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